Advanced Analytical Model Development for TFETs Using Visual TCAD/Silvaco TCAD

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1. Scope of Work & Detailed Technical Requirements Objective 1: Analytical Model Development & TCAD Validation • Mathematical & Physics Formulation: o Formulate 2D/3D surface potential models using Poisson's equation (parabolic approximation, superposition, or evanescent mode method) with appropriate boundary conditions for multi-gate architectures (Double-Gate, Gate-All-Around and Junctionless Gate-All-Around). o Calculate electric field distribution, potential profile, and energy band bending across the channel and tunneling junction. o Implement Non-Local Band-to-Band Tunneling (BTBT) models (e.g., Kane's model, Wentzel-Kramers-Brillouin (WKB) approximation) to extract tunneling current. o Formulate expressions for Key Performance Indicators (KPIs): Threshold ...

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